* Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS)
* Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM):
IRF830B
293.17 KB
D series power mosfet.
www.vishay.com
IRF830B
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Q.
📁 Related Datasheet
IRF830 PowerMOS transistor (NXP)
IRF830 N-Channel Power MOSFET (STMicroelectronics)
IRF830 N-CHANNEL ENHANCEMENT MODE MOSFET (TRSYS)
IRF830 N-Channel Power MOSFET (Intersil Corporation)
IRF830 N-Channel Power MOSFET (Fairchild Semiconductor)
IRF830 Power MOSFET (International Rectifier)
IRF830 N-Channel Enhancement Mode Power MOS Transistors (Comset Semiconductors)
IRF830 Power MOSFET (Vishay)
IRF830 Power Field Effect Transistor (ON Semiconductor)
IRF830 N-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS)
