8N60A Datasheet | Specifications & PDF Download

GenX3TM 600V IGBTs Ultra Low Vsat PT IGBTs for up to 5kHz switching IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SS

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Advance Technical Information GenX3TM 600V IGBT IXGA28N60A3 IXGP28N60A3 IXGH28N60A3 VCES = 600V IC110 = 28A V CE(sat)  1.4V Ultra Low Vsat

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GenX3TM 600V IGBT w/Diode Ultra Low Vsat PT IGBT for up to 5kHz switching IXGH48N60A3D1 VCES = IC110 = VCE(sat) ≤ 600V 48A 1.35V TO-247 AD Symbol

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Advance Technical Information GenX3TM 600V IGBT IXGP28N60A3M VCES = 600V IC110 = 15A V CE(sat)  1.4V Ultra Low Vsat PT IGBT for up to 5kHz

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Advance Technical Information GenX3TM 600V IGBT IXGA28N60A3 IXGP28N60A3 IXGH28N60A3 VCES = 600V IC110 = 28A V CE(sat)  1.4V Ultra Low Vsat

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Advance Technical Information GenX3TM 600V IGBT IXGA28N60A3 IXGP28N60A3 IXGH28N60A3 VCES = 600V IC110 = 28A V CE(sat)  1.4V Ultra Low Vsat

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ITP08N60A ITA08N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • Charger • SMPS Power Supply • LCD Panel Power Featur

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SEMICONDUCTOR 8N60 Series RRooHHSS Nell High Power Products DESCRIPTION N-Channel Power MOSFET (8A, 600Volts) The Nell 8N60 is a three-terminal s

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SEMICONDUCTOR 8N60 Series RRooHHSS Nell High Power Products DESCRIPTION N-Channel Power MOSFET (8A, 600Volts) The Nell 8N60 is a three-terminal s

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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SVF8N60AF_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60AF is an N-channel enhancement mode power MOS field effect transistor which i

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Silicon N-Channel Power MOSFET CS8N60 A8D ○R General Description： CS8N60 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET CS8N60 ARD ○R General Description： CS8N60 ARD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

(6 views)

GenX3TM 600V IGBTs Ultra Low Vsat PT IGBTs for up to 5kHz switching IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SS

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