8N70 Datasheet | Specifications & PDF Download

SVF8N70F_Datasheet 8A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N70F is an N-channel enhancement mode power MOS field effect transistor which is

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UNISONIC TECHNOLOGIES CO., LTD 8N70 8A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced techn

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 VDSS = ID25 =  RDS(

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UNISONIC TECHNOLOGIES CO., LTD 8N70K-MT Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N70K-MT is an N-channel power MOSFET usi

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HFP8N70U HFP8N70U 700V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Ver

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 VDSS = ID25 =  RDS(

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Preliminary Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N70X2M VDSS = ID25 =  RDS(on) 700V 8A 550m N-Channel E

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DG8N70 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG8N70N，， ，，，。 ，，。 DG8N70 is an N-channel enhancement mode MOSFET, which is

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Silicon N-Channel Power MOSFET CS8N70F A9H2-G ○R General Description： CS8N70F A9H2-G , the silicon N-channel Enhanced VDMOSFETs, is obtained by th

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UNISONIC TECHNOLOGIES CO., LTD 8N70-ML Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET 11  DESCRIPTION TO-220F TO-220F1 The UTC 8N70-ML is a hig

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isc N-Channel MOSFET Transistor IXTP8N70X2M ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·100% aval

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UNISONIC TECHNOLOGIES CO., LTD 18N70-HC 18A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N70-HC is a N-channel enhancement MOSFET using UTC’s

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SSRF08N70SL Elektronische Bauelemente 8A , 700V , RDS(ON) 1.2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 700V ·Static Drain-Source On-Resistance : RDS(on) ≤ 500mΩ@VGS= 10V ·Fast Sw

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 700V ·Static Drain-Source On-Resistance : RDS(on) ≤ 500mΩ@VGS= 10V ·Fast Sw

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HFS8N70S Dec 2012 HFS8N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ ȍ ID = 7.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanc

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HFD8N70U_HFU8N70U HFD8N70U / HFU8N70U 700V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Ox

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HFS8N70U HFS8N70U 700V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Ver

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 VDSS = ID25 =  RDS(

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