8N80C Datasheet | Specifications & PDF Download

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET® MOSFET December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET® MOSFET 800 V, 8.0 A

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FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET® MOSFET December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET® MOSFET 800 V, 8.0 A,

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FQA8N80C 800V N-Channel MOSFET September 2006 QFET FQA8N80C 800V N-Channel MOSFET Features • • • • • • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V Low g

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FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET® MOSFET December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET® MOSFET 800 V, 8.0 A,

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.65Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100%

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isc N-Channel MOSFET Transistor SPP08N80C3，ISPP08N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.65Ω ·Enhancement mode ·Fast Switchin

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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FQA8N80C_F109 800V N-Channel MOSFET FQA8N80C_F109 800V N-Channel MOSFET Features • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V • Low gate charge ( typica

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