90-100V Datasheet | Specifications & PDF Download

TDG100E90BEP Bottom-side cooled, 100V E-mode GaN transistor Product Specification Features • 100 V enhancement mode GaN power switch • Bottom-side co

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100V, 90A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGM107R7T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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FDD3690 April 2001 FDD3690 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve th

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AOTL77908 100V N-Channel AlphaSGT TM General Description • AlphaSGT™ 100V, N-Channel Power MOSFET • Low RDS(ON) • Tjmax = 175°C • PB-free lead platin

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FQP90N10V2/FQPF90N10V2 QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tran

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FQP90N10V2/FQPF90N10V2 QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tran

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FQP90N10V2/FQPF90N10V2 QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tran

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5.0SMDJ16A - 5.0SMDJ100A Taiwan Semiconductor 5000W, 16V - 100V Surface Mount Transient Voltage Suppressor FEATURES ● 5000 watts peak pulse power ca

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AOTF290L 100V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching

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AONS66908 100V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology 100V • Low RDS(ON) • Logic Level Driving • Excellent QG

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FDS3590-NL-VB FDS3590-NL-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 100 V 3

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FQP90N10V2/FQPF90N10V2 QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tran

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SMF5.0A - SMF100A Taiwan Semiconductor 200W, 5V - 100V Surface Mount Transient Voltage Suppressor FEATURES ● Photo Glass passivated junction ● Low p

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