90N03 Datasheet | Specifications & PDF Download

Description AP90N03D 30V N-Channel Enhancement Mode MOSFET The AP90N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1

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HRLFS90N03K June 2017 HRLFS90N03K 30V N-Channel Trench MOSFET Features  Low Dense Cell Design, Logic Level  Reliable and Rugged  Advanced Trench

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Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t

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IPD090N03L G E8177 MOSFET OptiMOSª 3 Power-Transistor, 30 V Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Q

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up

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TTD90N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) Features  Trench Power Technology  Low RDS(ON)  Low Ga

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Description AP90N03NF 30V N-Channel Enhancement Mode MOSFET The AP90N03NF uses advanced trench technology to provide excellent RDS(ON), low gate cha

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Analog Power AM90N03-01P N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Ty

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Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t

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Analog Power N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9mΩ ·Enhancement mode: ·100% avalanche

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TTG90N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) Features  Trench Power Technology  Low RDS(ON)  Low Ga

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Analog Power N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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SI-TECH SEMICONDUCTOR CO.,LTD S90N030R/S N-Channel MOSFET Features █ 90V,190A,Rds(on)(typ)=3mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Av

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ

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BSC090N03MS G OptiMOS™3 M-Series Power-MOSFET Product Summary Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for H

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Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t

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Silicon N-Channel Power MOSFET CS90N03 B4 ○R General Description： CS90N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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