90N03 Datasheet | Specifications & PDF Download

Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1

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SLD90N03T SLD90N03T 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advance

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Description AP90N03D 30V N-Channel Enhancement Mode MOSFET The AP90N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Silicon N-Channel Power MOSFET ○R CS90N03 A4 General Description： CS90N03 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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SLN90N03T SLN90N03T 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advance

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up

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TTD90N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) Features  Trench Power Technology  Low RDS(ON)  Low Ga

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90N03S-VB 90N03S-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0023 at VGS = 10 V 0.0032 at VG

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Silicon N-Channel Power MOSFET CS90N03 B3 ○R General Description： CS90N03 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up

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STD90N03L STD90N03L-1 N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET™ III Power MOSFET General features Type STD90N03L STD90N03L-1 VDSS 30V 30V

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ

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STD90N03L STD90N03L-1 N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET™ III Power MOSFET General features Type STD90N03L STD90N03L-1 VDSS 30V 30V

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ADV ADM90N03E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V ID 90A RDS(ON) (mΩ) 4.0mΩ TO252 2 1 2 3 Absolute Max

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„ PRODUCT CHARACTERISTICS MOT90N03A/90N03F N-CHANNEL MOSFET VDSS RDS(on)Typ( @V GS=4.5 V) RDS(on)Typ(@VGS =10 V) ID 30V 5.6mΩ 3.6mΩ 90A Symbol 2.

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HRLFS90N03K June 2017 HRLFS90N03K 30V N-Channel Trench MOSFET Features  Low Dense Cell Design, Logic Level  Reliable and Rugged  Advanced Trench

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TTG90N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) Features  Trench Power Technology  Low RDS(ON)  Low Ga

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„ PRODUCT CHARACTERISTICS MOT90N03A/90N03F N-CHANNEL MOSFET VDSS RDS(on)Typ( @V GS=4.5 V) RDS(on)Typ(@VGS =10 V) ID 30V 5.6mΩ 3.6mΩ 90A Symbol 2.

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Silicon N-Channel Power MOSFET CS90N03 B4 ○R General Description： CS90N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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