IPD090N03L - N-Channel MOSFET
IPD090N03L Features
* Static drain-source on-resistance: RDS(on)≤9mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fast switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS D
