IPD096N08N3G Power-Transistor

Infineon Technologies

Description

OptiMOS(TM)3 Power-Transistor .

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Datasheet Specifications

Part number: IPD096N08N3G
Manufacturer: Infineon ↗ Technologies
File Size: 335.69 KB
Datasheet: IPD096N08N3G-InfineonTechnologies.pdf
Description: Power-Transistor

Features

* Ideal for high frequency switching
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to JEDEC

Applications

* Halogen-free according to IEC61249-2-21 Type IPD096N08N3 G IPD096N08N3 G Product Summary VDS RDS(on),max ID 80 V 9.6 mW 73 A Package Marking PG-TO252-3 096N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C

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IPD096N08N3G Power-Transistor Infineon Technologies

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