IPD090N03LGE8177
0.98MB
Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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IPD090N03LG - MOSFET
(Infineon)
IPD090N03L G E8177
MOSFET
OptiMOSĀŖ 3 Power-Transistor, 30 V
Features
ā¢ Fast switching MOSFET for SMPS ā¢ Optimized technology for DC/DC converters ā¢ Q.
IPD090N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03L
Ā·FEATURES Ā·Static drain-source on-resistance:
RDS(on)ā¤9mā¦ Ā·Enhancement mode: Ā·100% avalanche .
IPD090N03L - MOSFET
(Infineon)
IPD090N03L G E8177
MOSFET
OptiMOSĀŖ 3 Power-Transistor, 30 V
Features
ā¢ Fast switching MOSFET for SMPS ā¢ Optimized technology for DC/DC converters ā¢ Q.
IPD096N08N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD096N08N3,IIPD096N08N3
Ā·FEATURES Ā·Static drain-source on-resistance:
RDS(on)ā¤9.6mā¦ Ā·Enhancement mode: Ā·100% avalanc.
IPD096N08N3 - Power-Transistor
(Infineon)
OptiMOS(TM)3 Power-Transistor
Features ā¢ Ideal for high frequency switching ā¢ Optimized technology for DC/DC converters ā¢ Excellent gate charge x R DS.
IPD096N08N3G - Power-Transistor
(Infineon Technologies)
OptiMOS(TM)3 Power-Transistor
Features ā¢ Ideal for high frequency switching ā¢ Optimized technology for DC/DC converters ā¢ Excellent gate charge x R DS.
IPD09N03L - OptiMOS Buck converter series
(Infineon Technologies AG)
IPD09N03L OptiMOSĀ® Buck converter series
Feature
ā¢ N-Channel
Product Summary VDS RDS(on) ID 30 8.9 30
P- TO252 -3-11
V mā¦ A
ā¢ Logic Level ā¢ Low On-.
IPD09N03LA - Power Transistor
(Infineon Technologies AG)
OptiMOSĀ®2 Power-Transistor
Features ā¢ Ideal for high-frequency dc/dc converters ā¢ Qualified according to JEDEC1) for target application
ā¢ N-channel, l.
IPD09N03LAG - Power Transistor
(Infineon)
OptiMOSĀ®2 Power-Transistor
Features ā¢ Ideal for high-frequency dc/dc converters ā¢ Qualified according to JEDEC1) for target application
ā¢ N-channel, l.
IPD025N06N - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSTM Power-Transistor, 60 V IPD025N06N
Data Sheet
Rev. 2.5 Final
Power Managem.