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IPD090N03LGE8177 MOSFET

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Description

IPD090N03L G E8177 MOSFET OptiMOSª 3 Power-Transistor, 30 V .

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Features

* Fast switching MOSFET for SMPS
* Optimized technology for DC/DC converters

Applications

* N-channel, logic level
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* Avalanche rated
* Pb-free plating Table 1 Key Performance Parameters Parameter Value Unit VDS 30 V RDS(on),max 9 mΩ ID 40 A DPAK tab

IPD090N03LGE8177 Distributors

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