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IPD096N08N3 Datasheet - INCHANGE

IPD096N08N3 N-Channel MOSFET

IPD096N08N3 Features

* Static drain-source on-resistance: RDS(on)≤9.6mΩ

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* High frequency switching

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA

IPD096N08N3 Datasheet (239.37 KB)

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Datasheet Details

Part number:

IPD096N08N3

Manufacturer:

INCHANGE

File Size:

239.37 KB

Description:

N-channel mosfet.

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IPD096N08N3 N-Channel MOSFET INCHANGE

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