Lighted Pushbutton Switch Control Units Assembled .
Rectron Semiconductor
1A3G - GLASS PASSIVATED JUNCTION SILICON RECTIFIER
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere 1A1G THRU 1A7G FEATURES * High reliability * Low leaka.
Jinan Gude Electronic Device
F1A3G - 1.0 AMP. GLASS PASSIVATED FAST RECOVERY RECTIFIERS
.
OMRON
A3GA - Lighted Pushbutton Switch
Lighted Pushbutton Switch Control Units Assembled Lighted Pushbutton Switches and Separate-Unit Type 16-mm Cylindrical Series s Lighted and non-lighte.
OMRON
A3GJ - Lighted Pushbutton Switch
Lighted Pushbutton Switch Control Units Assembled Lighted Pushbutton Switches and Separate-Unit Type 16-mm Cylindrical Series s Lighted and non-lighte.
Panasonic
MA3G655 - Silicon planar type (cathode common)
Fast Recovery Diodes (FRD) MA3G655 Silicon planar type (cathode common) Unit : mm 0.7 For switching circuits I Features • High reverse voltage VR • .
Panasonic
MA3G762 - Silicon epitaxial planar type (cathode common)
Schottky Barrier Diodes (SBD) MA3G762 Silicon epitaxial planar type (cathode common) Unit : mm 0.7 ± 0.1 For switching power supply I Features • For.
Chino-Excel Technology
CED83A3G - N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 93A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 7.4mΩ @VGS = 4.5V. Super high dense cell d.
Chino-Excel Technology
CEU83A3G - N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 93A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 7.4mΩ @VGS = 4.5V. Super high dense cell d.
Chino-Excel Technology
CEU73A3G - N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 57A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. Super high dense cell desi.
Chino-Excel Technology
CEU83A3G - N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 93A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 7.4mΩ @VGS = 4.5V. Super high dense cell d.
CET
CEP83A3G - N-Channel MOSFET
CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ.
Suntan
10A3G - General Purpose Plastic Rectifier
Suntan® Su® 10A05G THRU 10A10G General Purpose Plastic Rectifier REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 10 Ampere FEATU RE S ◆Low forward .
STMicroelectronics
A3G4250D - MEMS motion sensor
A3G4250D MEMS motion sensor: 3-axis digital output gyroscope Features ■ Wide supply voltage: 2.4 V to 3.6 V ■ ±245 dps full scale ■ I2C/SPI digital o.
NXP
A3G26H502W17S - RF Power GaN Transistor
NXP Semiconductors Technical Data Document Number: A3G26H502W17S Rev. 1, 01/2021 RF Power GaN Transistor This 80 W asymmetrical Doherty RF power Ga.
Suntan
10A3G - General Purpose Plastic Rectifier
Suntan® Su® 10A05G THRU 10A10G General Purpose Plastic Rectifier REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 10 Ampere FEATU RE S ◆Low forward .
NXP
A3G26D055N - Airfast RF Power GaN Amplifier
A3G26D055N Airfast RF Power GaN Amplifier Rev. 3 — 18 October 2023 Product data sheet 1 General description This 8 W symmetrical Doherty RF power G.
Panasonic
MN101CFA3G - Microcontroller
MN101CA3 Series Type Internal ROM type ROM (byte) RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101CA3F MN101CFA3G Mask ROM .
CET
CEM73A3G - N-Channel MOSFET
CEM73A3G N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12.5A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 18mΩ @VGS = 4.5V. Super high de.
Pan Jit International Inc.
1A3G - MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
1A1G THRU 1A7G MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES l Plastic package has Un.
OMRON
A3G - Lighted Pushbutton Switch
Lighted Pushbutton Switch Control Units Assembled Lighted Pushbutton Switches and Separate-Unit Type 16-mm Cylindrical Series s Lighted and non-lighte.