AN-0001 Datasheet | Specifications & PDF Download

BISS0001 PIR CONTROLLER BISS0001 GENERAL DESCRIPTION BISS0001 is a PIR (passive infra-red) controller, using analog mixing digital design technique a

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ＩＮJ0001AＸ SERIES High speed switching Silicon P-channel MOSFET DESCRIPTION INJ0001AＸ is a Silicon P-channel MOSFET. This product is most suitable fo

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MAX30001 Ultra-Low-Power, Single-Channel Integrated Biopotential (ECG, R-to-R, and Pace Detection) and Bioimpedance (BioZ) AFE General Description T

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DATASHEET ISL70001SEH, ISL70001SRH Radiation Hardened and SEE Hardened 6ARhcetStocpyNonsnomt:ca/t/hmcwRtreoweonncwudoor.emruTedsemnRcBeehesunnpacdils

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DATASHEET ISL70001ASEH Radiation Hardened and SEE Hardened 6A Synchronous Buck Regulator FN8365 Rev.3.03 Sep 16, 2022 The ISL70001ASEH is a radiati

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GP2W0001YP IrDA Data Sheet FEATURES • Built-in Photodiode • Operating voltage 2.7 V to 5.5 V • In circuit design, allow for the degradation of light e

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INK0001AＸ SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION INK0001AＸ is a Silicon N-channel MOSFET. This product is most suitable fo

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DATASHEET ISL70001SEH, ISL70001SRH Radiation Hardened and SEE Hardened 6ARhcetStocpyNonsnomt:ca/t/hmcwRtreoweonncwudoor.emruTedsemnRcBeehesunnpacdils

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Multilayer Ceramic Transient Voltage Suppressors (USB Series) USB Series are designed to protect the high speed data lines against ESD transients. Th

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TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 ○ Power Amplifier Applications • High collector voltage: VCEO = －160 V (min.) • Complement

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1000 Base CX Transformer Modules ★ Designed to meet IEEE802.3ab requirement ★ Designed to meet IR 2350C peak requirement ★ Primary inductance 350µH

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SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. BISS0001B（：S&CIC1572） 、  COMS ；  ，，；  ；  ，、，；  ；  +3V~+5V；  SOP-16、DIP-16 ； 、 A1 VO

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EM60000 Series Stereo Four Channels 8-Bit Based Sound Processor Product Specification Doc. Version 1.5 ELAN MICROELECTRONICS CORP. April 2006 i Trade

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LinkCom Manufacturing Co.,Ltd G . Fast Transformer RoHS Compliant Operating Temperature -40°C to +85°C LGT0001-50R Inductance: Leakage Inductance: I

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GP2W0001YP IrDA Data Sheet FEATURES • Built-in Photodiode • Operating voltage 2.7 V to 5.5 V • In circuit design, allow for the degradation of light e

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GP2W0001YP IrDA Data Sheet FEATURES • Built-in Photodiode • Operating voltage 2.7 V to 5.5 V • In circuit design, allow for the degradation of light e

(14 views)

INK0001AＸ SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION INK0001AＸ is a Silicon N-channel MOSFET. This product is most suitable fo

(14 views)

Multilayer Ceramic Transient Voltage Suppressors (USB Series) USB Series are designed to protect the high speed data lines against ESD transients. Th

(14 views)

Multilayer Ceramic Transient Voltage Suppressors (USB Series) USB Series are designed to protect the high speed data lines against ESD transients. Th

(14 views)

Multilayer Ceramic Transient Voltage Suppressors (USB Series) USB Series are designed to protect the high speed data lines against ESD transients. Th

(14 views)