AO4812A Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4812A uses advanced trench technology to provide excellent R

AO4812 30V Dual N-Channel MOSFET General Description The AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The

AO4812 Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.026 at VGS = 4.5 V ID (A) 6.