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MF Metal Film Resistors INTRODUCTION The MF series Metal Film Resistors are manufactured by vacuum deposition of multiple layers of metal film on hi

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P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER M

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P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER M

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P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER M

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FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 61 mΩ • ID : –30 A • Integrated

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P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER M

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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASJ-8 STROBE FLASHER USE CT20ASJ-8 OUTLINE DRAWING 1.5 ± 0.2 6.5 5.0 ± 0.2 4 Dimensions in mm 0.

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www.DataSheet4U.com TITLE : 1 CHIP RESISTOR NETWORK SPECIFICATION (CONVEX) SYS-ENG-202 PAGE : 1 / 18 ASJ ASJ DOC NO : ASJ PTE LTD CHIP RESISTOR

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MF Metal Film Resistors INTRODUCTION The MF series Metal Film Resistors are manufactured by vacuum deposition of multiple layers of metal film on hi

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MF Metal Film Resistors INTRODUCTION The MF series Metal Film Resistors are manufactured by vacuum deposition of multiple layers of metal film on hi

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FS30ASJ-06F High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Ti

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P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER M

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FX20ASJ-2 High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.26 Ω • ID : – 20 A • Integra

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PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change. FX20ASJ-2 MITSUBISHI Pch POWER MOSFET FX20ASJ-2 HIGH-SPEED

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PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change. FX30ASJ-03 MITSUBISHI Pch POWER MOSFET FX30ASJ-03 HIGH-SPEE

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MITSUBISHI Nch POWER MOSFET FS2KMJ-3 HIGH-SPEED SWITCHING USE FS2KMJ-3 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15

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