ADVANCE INFORMATION SiC JFET ASJD1200R085 Normall.
GSI Technology
GS71108ASJ - 128K x 8 1Mb Asynchronous SRAM
GS71108ATP/J/SJ/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features 128K x 8 1Mb Asynchronous SRAM 7, 8, 10, 12 ns 3.3 V VDD Center VDD an.
Renesas
FS50ASJ-03F - N-channel MOSFET
FS50ASJ-03F High-Speed Switching Use Nch Power MOS FET Features • Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery T.
Toshiba
TC514100ASJL-10 - DRAM
www.DataSheet4U.com www.DataSheet4U.comwww.DataSheet4U.com www.DataSheet4U.com .
Toshiba
TC514100ASJL-70 - DRAM
www.DataSheet4U.com www.DataSheet4U.comwww.DataSheet4U.com www.DataSheet4U.com .
Mitsubishi Electric Semiconductor
FS30ASJ-03 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS2KM-16A HIGH-SPEED SWITCHING USE FS2KM-16A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 1.
Mitsubishi Electric Semiconductor
FS50ASJ-03 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS3VS-10 HIGH-SPEED SWITCHING USE FS3VS-10 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 ±.
ASJ
YCN16 - (YCN16 / YCN10) Chip Resistor Network
www.DataSheet4U.com TITLE : 1 CHIP RESISTOR NETWORK SPECIFICATION (CONVEX) SYS-ENG-202 PAGE : 1 / 18 ASJ ASJ DOC NO : ASJ PTE LTD CHIP RESISTOR .
ASJ
MF55SS - Metal Film Resistors
MF Metal Film Resistors INTRODUCTION The MF series Metal Film Resistors are manufactured by vacuum deposition of multiple layers of metal film on hi.
ASJ
MF65 - Metal Film Resistors
MF Metal Film Resistors INTRODUCTION The MF series Metal Film Resistors are manufactured by vacuum deposition of multiple layers of metal film on hi.
TIPTEK
P4SMASJ75CA - 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
P4SMAJ5.0 ~ P4SMAJ440A 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR FEATURES Glass passivated chip 400 W peak pulse power capability witha 10/1.
KEMET
C44PLGR6600AASJ - Aluminum Can Power Film Capacitors
Aluminum Can Power Film Capacitors C44P/C20A, 330 – 1,000 VAC/700 – 2,300 VDC, for PFC & AC Filter Overview The C44P/C20A series is a polypropylene m.
Toshiba
TC514101ASJ-50 - DRAM
www.DataSheet4U.com www.DataSheet4U.comwww.DataSheet4U.com www.DataSheet4U.com .
Toshiba
TC514102ASJ-60 - DRAM
www.DataSheet4U.com www.DataSheet4U.comwww.DataSheet4U.com www.DataSheet4U.com .
Toshiba
TC514100ASJL-80 - DRAM
www.DataSheet4U.com www.DataSheet4U.comwww.DataSheet4U.com www.DataSheet4U.com .
Mitsubishi Electric Semiconductor
FX6ASJ-06 - HIGH-SPEED SWITCHING USE
P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER M.
Mitsubishi Electric Semiconductor
FX6ASJ-2 - HIGH-SPEED SWITCHING USE
P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER M.
Renesas
FX30ASJ-03 - Pch Power MOS FET
FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 61 mΩ • ID : –30 A • Integrated.
Renesas
FX20ASJ-2 - Pch Power MOS FET
FX20ASJ-2 High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.26 Ω • ID : – 20 A • Integra.
