B390 Datasheet | Specifications & PDF Download

PNP Multi-Chip General-Purpose Amplifier FMB3906, MMPQ3906 Description This device is designed for general-purpose amplifier and switching applicatio

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FFB3906 / FMB3906 / MMPQ3906 FFB3906 E2 B2 C1 FMB3906 C2 E1 C1 E1 MMPQ3906 E2 B2 E3 B3 E4 B4 B1 SC70-6 Mark: .2A pin #1 C2 B1 E1 pin #1 B1 B2 E

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U1ZB6.8 - U1ZB390 SURFACE MOUNT SILICON ZENER DIODES VOLTAGE RANGE: 6.8 - 39 0V POWER: 1.0Wa t t s Features Complete voltage range 6.8 to 390 volts

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JMicron/JMB390 JMB390 RAID Port Multiplier Chip 1. Overview JMicron JMB390 is a single chip, 1 to 2-ports Serial ATA II Port Multiplier with RAID fu

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1ZB6.8-1ZB390 Zener Diodes POWER DISSIPATION: 1.0 W Features Silicon planar power zener diodes For use in stabilizing and clipping curcuits with hi

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1ZB6.8-1ZB390 Zener Diodes POWER DISSIPATION: 1.0 W Features Silicon planar power zener diodes For use in stabilizing and clipping curcuits with hi

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1ZB6.8-1ZB390 Zener Diodes POWER DISSIPATION: 1.0 W Features Silicon planar power zener diodes For use in stabilizing and clipping curcuits with hi

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1ZB6.8-1ZB390 Zener Diodes POWER DISSIPATION: 1.0 W Features Silicon planar power zener diodes For use in stabilizing and clipping curcuits with hi

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SFDMB3902F Specifications and Applications Information 12/30/08 Preliminary Package Configuration Smar t F or ce LED Smart For orce Driver The ERG S

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Green B370–B3100 3.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features  Guard Ring Die Construction for Transient Protection  Low Power Loss, Hig

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U1ZB6.8~U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8~U1ZB390 CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipati

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1ZB6.8-1ZB390 Zener Diodes POWER DISSIPATION: 1.0 W Features Silicon planar power zener diodes For use in stabilizing and clipping curcuits with hi

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1ZB6.8-1ZB390 Zener Diodes POWER DISSIPATION: 1.0 W Features Silicon planar power zener diodes For use in stabilizing and clipping curcuits with hi

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FDB390N15A — N-Channel PowerTrench® MOSFET April 2015 FDB390N15A N-Channel PowerTrench® MOSFET 150 V, 27 A, 39 mΩ Features • RDS(on) = 33.5 mΩ (Typ

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SOT883B PMZB390UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Tr

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1ZB6.8-1ZB390 Zener Diodes POWER DISSIPATION: 1.0 W Features Silicon planar power zener diodes For use in stabilizing and clipping curcuits with hi

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1ZB6.8-1ZB390 Zener Diodes POWER DISSIPATION: 1.0 W Features Silicon planar power zener diodes For use in stabilizing and clipping curcuits with hi

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1ZB6.8-1ZB390 Zener Diodes POWER DISSIPATION: 1.0 W Features Silicon planar power zener diodes For use in stabilizing and clipping curcuits with hi

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1ZB6.8-1ZB390 Zener Diodes POWER DISSIPATION: 1.0 W Features Silicon planar power zener diodes For use in stabilizing and clipping curcuits with hi

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