FDB390N15A Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Consumer Appliances LED TV Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D D G S D2-PAK G S Ratings TC = 25oC unless otherwise noted. Thermal Characteristics Symbol RθJC...
FDB390N15A Key Features
- RDS(on) = 33.5 mΩ (Typ.) @ VGS = 10 V, ID = 27 A
- Fast Switching Speed
- Low Gate Charge, QG = 14.3 nC (Typ.)
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant