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FDB390N15A - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Consumer Appliances LED TV Synchronous Rectification

Key Features

  • RDS(on) = 33.5 mΩ (Typ. ) @ VGS = 10 V, ID = 27 A.
  • Fast Switching Speed.
  • Low Gate Charge, QG = 14.3 nC (Typ. ).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Full PDF Text Transcription for FDB390N15A (Reference)

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FDB390N15A — N-Channel PowerTrench® MOSFET April 2015 FDB390N15A N-Channel PowerTrench® MOSFET 150 V, 27 A, 39 mΩ Features • RDS(on) = 33.5 mΩ (Typ.) @ VGS = 10 V, ID = 2...

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, 27 A, 39 mΩ Features • RDS(on) = 33.5 mΩ (Typ.) @ VGS = 10 V, ID = 27 A • Fast Switching Speed • Low Gate Charge, QG = 14.3 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Consumer Appliances • LED TV • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D D G S D2-PAK G S Absolut