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FDB390N15A — N-Channel PowerTrench® MOSFET
April 2015
FDB390N15A
N-Channel PowerTrench® MOSFET
150 V, 27 A, 39 mΩ
Features
• RDS(on) = 33.5 mΩ (Typ.) @ VGS = 10 V, ID = 27 A • Fast Switching Speed • Low Gate Charge, QG = 14.3 nC (Typ.) • High Performance Trench Technology for Extremely Low
RDS(on) • High Power and Current Handling Capability • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Consumer Appliances • LED TV • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter
D
D
G S
D2-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.