B688 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB688 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SD718 APP

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Product Bulletin OPB685 July 1996 Photologic® Optical Flag Switch Types OPB685, OPB686, OPB687, OPB688 Features • Photologic® output • Four output o

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Photologic® Optical Flag Switch OPB685, OPB685-3, OPB686, OPB687, OPB688 OPB695, OPB696, OPB697, OPB698 Series Features:  Photologic® output  Fou

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N-Channel Enhancement Mode Power MOSFET MXB6888 DESCRIPTION The MXB6888 is N-channel MOS Field Effect Transistor designed for high current switching a

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UNISONIC TECHNOLOGIES CO., LTD 2SB688 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS  DESCRIPTION The UTC 2SB688 is a silicon PNP transistor in T

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary t

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SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB688 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SD718 APP

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SILICON PNP TRIPLE DIFFUSED TYPE 2SB688 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS. FEATURES . Complementary to 2SD718. . Recommended for 45 ~50W

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SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 4

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AWB688 DC ~ 1500 MHz Wideband MMIC Amplifier Features  DC ~ 1200 MHz, 50  Application  For 30 ~ 860 MHz 50  Matching @ Vdevice = +10 V, Idd = 300

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD718. Recommended for 45 50W Audio Frequency Amplifier Outp

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UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Fr

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isc Silicon PNP Power Transistor 2SB688 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SB688 TRANSISTOR (PNP) FEATURES z High Breakdown Voltage z

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LOW RATE LITHIUM CELL QTC85 PC SERIES: 3B6880 SIZE PC LITHIUM THIONYL CHLORIDE CELL Technical Overview Open Circuit Voltage (25oC) Rated Discharge Cur

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TinyPowerTM A/D Type Smart Card OTP MCU with LCD, DAC, ISO 7816 and USB Interfaces HT56RB688 Revision: 1.10 Date: April 15, 2013 Contents Table of C

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