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Micron Technology
MT41K512M16 - 32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM
8Gb: x16 TwinDie DDR3L-RS SDRAM Description TwinDie™ 1.35V DDR3L-RS SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description The 8Gb (TwinDie™) 1.35V DD.
PM Tech
PMS307416A - 2048K Words x 16 Bits x 4 Banks (128-MBIT) Synchronous Dynamic RAM
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ESMT
M12L64322A-5TG2S - 512K x 32 Bit x 4 Banks Synchronous DRAM
ESMT SDRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program.
Hynix Semiconductor
HY57V641620HG - 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM D E S C R IP T IO N The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally sui.
Hynix Semiconductor
HY57V561620CLT - 4 Banks x 4M x 16Bit Synchronous DRAM
www.DataSheet4U.com HY57V561620C(L)T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Syn.
ISSI
IS43LR32400G - 1M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32400G 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32400G is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DR.
TMT
T431616C - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
tm • • • • • TE CH T431616C SDRAM FEATURES 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed add.
Elite Semiconductor Memory Technology
M13S2561616A - 4M x 16 Bit x 4 Banks Double Data Rate SDRAM
www.DataSheet4U.com ESMT Revision History Revision 0.1 (28 Apr. 2006) - Original M13S2561616A Revision 1.0 (07 Jun. 2006) - Delete Preliminary at e.
Hynix Semiconductor
HY57V64820HG - 4 Banks x 2M x 8Bit Synchronous DRAM
HY57V64820HG 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64820HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the.
AMIC Technology
A43L0632 - 512K X 32 Bit X 2 Banks Synchronous DRAM
www.DataSheet4U.com A43L0632 Preliminary Document Title 512K X 32 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 512K X 32 Bit X 2 Ban.
Hynix Semiconductor
HY57V28820HCT - 4Banks x 4M x 8bits Synchronous DRAM
HY57V28820HC(L)T 4Banks x 4M x 8bits Synchronous DRAM 0.1 : Hynix Change 0.2 : Burst read single write mode correction Rev. 0.2 / Aug. 2001 1 HY57V.
Hynix Semiconductor
HY57V643220C - 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited fo.
ISSI
IS42VM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronou.
Hynix Semiconductor
HY57V561620BLT-I - 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620B(L)T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited fo.
Hynix Semiconductor
HY57V561620 - 4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620(L)T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the ma.
Hyundai
HY5DU281622LT-L - 4 Banks x 2M x 16Bit Double Data Rate SDRAM
HY5DU281622 4 Banks x 2M x 16Bit Double Data Rate SDRAM PRELIMINARY DESCRIPTION The Hyundai HY5DU281622 is a 134,217,728-bit CMOS Double Data Rate(DD.
Micron
EDJ4208EFBG-L - 64 Meg x 8 x 8 banks DDR3L-RS SDRAM
4Gb: x8, x16 DDR3L-RS SDRAM Description DDR3L-RS SDRAM EDJ4208EFBG-L – 64 Meg x 8 x 8 banks EDJ4216EFBG-L – 32 Meg x 16 x 8 banks Description The 1..
Winbond
W9816G6CH - 512K x 2 BANKS x 16 BITS SDRAM
W9816G6CH 512K × 2 BANKS × 16 BITS SDRAM Table of Content- 1. GENERAL DESCRIPTION .
Hynix Semiconductor
HY57V161610D - 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous .
Hynix Semiconductor
HY57V161610ETP-I - 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ETP-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suite.