BAW101 Datasheet | Specifications & PDF Download

Silicon Switching Diode Array q BAW 101 Electrically insulated high-voltage medium-speed diodes Type BAW 101 Marking JPs Ordering Code (tape and

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Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection • Two Electrica

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BAW101S High voltage double diode Product data sheet 2003 May 13 NXP Semiconductors Hig

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BAW101 High Voltage Double Diode FEATURES z High Switching Speed:Max.50ns. z High Continuous Reverse Voltage:300V. z Electrically Insulated Diodes.

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Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

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SMD Type Silicon Switching Diode Array BAW101 Features Electrically insulated high-voltage medium-speed diodes Diodes Unit: mm A bsolute M axim um

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NEW PRODUCT Features • Fast Switching Speed: max. 50ns • High Reverse Breakdown Voltage: 300V • Two Electrically Isolated Elements in a Single Compac

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Features  Fast Switching Speed  High Reverse Breakdown Voltage  Two Electrically Isolated Elements in a Single Compact Package  Low Leakage Curren

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BAW101S-Q High voltage double diode 14 September 2021 Product data sheet 1. General description The BAW101S is a high-speed switching diode array wi

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BAW101 SURFACE MOUNT SILICON DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR

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SMD Type High Voltage Double Diode BAW101S Diodes +0.11.25 -0.1 Features Small plastic SMD package High switching speed: max. 50 ns High continuou

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DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BAW101 High voltage double diode Product data sheet 2003 May 13 NXP Semiconductors High voltage double d

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