BCW31 Datasheet | Specifications & PDF Download

NPN General Purpose Amplifier FEATURES z Low current(max.100mA). z Low voltage(max.32V). Pb Lead-free Production specification BCW31/32/33 APPLICA

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RoHS BCW31 FEATURES * Low current(100mA) * Low voltage(32V) * General purpose swithching and amplification DABSOLUTE MAXIMUM RATINGS at Ta=25 Ch

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BCW31 BCW31 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from

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DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of

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BCW31 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW31, manufactured in the pop

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BCW29/30. MAXIMUM RATING (Ta=25 ) CHARACT

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage — Collector Current Continuous Symbol VCEO VCBO Vebo ic

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SMD Type TransistIoCrs NPN General Purpose Transistors BCW31,BCW32,BCW33 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1

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