BCW66 Datasheet | Specifications & PDF Download

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) BCW66F FEATURES * Power dissipation PCM : 0.2 W (Tamb=2

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BCW65, BCW66 NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary ty

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Features  BVCEO > 45V  IC = 800mA High Continuous Collector Current  Low Saturation Voltage VCE(sat) < 300mV @ 100mA  Complementary PNP Type: BCW6

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL P

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BCW66 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features BCW68 。 Compleme

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BCW65, BCW66 NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary ty

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BCW66 SMALL SIGNAL NPN TRANSISTORS Type BCW66F BCW 66G BCW 66H s Marking EF EG EH s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTI

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BCW66 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features BCW68 。 Compleme

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NPN Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary type: BCW68 (P

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BCW66F 2.5 max 1.3±0.1 ELV BCW66F SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren Version 2017-03-15 SOT-23 (TO-236) Typical A

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW66 TRANSISTOR (NPN) FEATURES Complementary to BCW68 BCW6

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NPN Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary type: BCW68 (P

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BCW65, BCW66 NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary ty

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BCW65 SERIES BCW66 SERIES SURFACE MOUNT SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and

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Elektronische Bauelemente BCW66F / BCW66G / BCW66H 0.8A , 75V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies

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BCW66 SMALL SIGNAL NPN TRANSISTORS Type BCW66F BCW 66G BCW 66H s Marking EF EG EH s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTI

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Elektronische Bauelemente BCW66F / BCW66G / BCW66H 0.8A , 75V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies

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NPN Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary type: BCW68 (P

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BCW65, BCW66 NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary ty

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BCW66 series 45 V, 800 mA NPN general-purpose transistor Rev. 1 — 21 April 2017 Product data sheet 1 General description NPN general-purpose tran

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