MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this.
BD175 - (BD175 - BD179) SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD175 BD177 BD179 www.datasheet4u.com DESCRIPTION ·With TO-126 package.BD177 - (BD175 - BD179) SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD175 BD177 BD179 www.datasheet4u.com DESCRIPTION ·With TO-126 package.BD179 - (BD175 - BD179) SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD175 BD177 BD179 www.datasheet4u.com DESCRIPTION ·With TO-126 package.BD179G - Plastic Medium-Power Silicon NPN Transistor
BD179G Plastic Medium-Power Silicon NPN Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complemen.BD179 - Plastic Medium Power Silicon NPN Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD179/D Plastic Medium Power Silicon NPN Transistor . . . designed for use in 5.0 to 1.BD179 - Plastic Medium-Power NPN Silicon Transistor
BD179 Plastic Medium-Power NPN Silicon Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementa.BD179 - NPN power transistor
BD179 NPN power transistor Features ■ NPN transistor Applications t(s)■ General purpose switching ucDescription rodThe device is manufactured in Pl.BD179 - NPN Epitaxial Silicon Transistor
BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively 1 TO-126 2.Collector 3.Base .BD179-10 - Plastic Medium Power Silicon NPN Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD179/D Plastic Medium Power Silicon NPN Transistor . . . designed for use in 5.0 to 1.BD179 - EPITAXIAL SILICON POWER TRANSISTORS
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD175 BD177 BD179 NPN.BD179 - EPITAXIAL SILICON POWER TRANSISTORS
Transys Electronics LIMITED EPITAXIAL SILICON POWER TRANSISTORS BD175 BD177 BD179 NPN BD176 BD178 BD180 PNP ECB Intended for use in Medium Power L.BD179 - NPN Transistor
isc Silicon NPN Power Transistor BD179 DESCRIPTION ·DC Current Gain- : hFE= 40-250(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SU.