| Part Number | Description | Manufacture |
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Darlington Transistors Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2 V ( |
 Multicomp |
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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 83C / BDW84C THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.96 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Curr |
 STMicroelectronics |
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PNP Transistor nce, Junction to Case isc website：www.iscsemi.com MAX 1.5 UNIT ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER |
 INCHANGE |
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PNP Epitaxial Silicon Transistor |
 Fairchild Semiconductor |
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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
STMicroelectronics |
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SILICON POWER TRANSISTOR r-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition freq |
 SavantIC |
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SILICON POWER TRANSISTOR rwise specified PARAMETER BDW83 BDW83A V(BR)CEO Collector-emitter breakdown voltage BDW83B BDW83C BDW83D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW83 BDW83A ICBO Collect |
SavantIC |
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Hammer Drivers/ Audio Amplifiers Applications Emitter Sustaining Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C ICEO Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 45V, |
Fairchild Semiconductor |
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Silicon PNP Darlington Power Transistor l Resistance, Junction to Case isc website：www.iscsemi.com MAX UNIT 1.56 ℃/W 62.5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAM |
INCHANGE |
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NPN SILICON POWER DARLINGTONS 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 12 0.3 80 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION 1 SEPTEMBER 1993 |
 Bourns Electronic Solutions |
| Total 286 results |
