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BDW Matched Datasheet



Part Number Description Manufacture
BDW93C
Silicon NPN Power Transistors
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW93 VCEO(SUS) Collector-emitter sustaining voltage BDW93A BDW93B IC=0.1A, IB=0 BDW93C VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 VF-1 VF-2 Collector-
Manufacture
SavantIC
BDW94C
Darlington Transistors
Designed for general-purpose amplifier and low speed switching applications
• Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C
• Collector-emitter saturation voltage-VCE (sat) = 2 V (
Manufacture
Multicomp
BDW93B
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
4 BDW93B/BDW93C/BDW94B/BDW94C THERMAL DATA Rthj-ca se Thermal Resistance Junction-case 1. 56 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter T est Con ditio ns ICBO Collector Cut-off Current (IE =
Manufacture
SGS-THOMSON
BDW84C
SILICON POWER TRANSISTOR
5 unless otherwise specified PARAMETER BDW84 BDW84A V(BR)CEO Collector-emitter breakdown voltage BDW84B BDW84C BDW84D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW84 BDW84A
Manufacture
SavantIC
BDW64
PNP Transistor
e Rth j-c Thermal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci
Manufacture
INCHANGE
BDW83
NPN SILICON POWER DARLINGTONS
Air Thermal Resistance 23/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) B
Manufacture
Comset Semiconductors
BDW94
Silicon PNP Power Transistor
j-c Thermal Resistance, Junction to Case MAX 1.5 UNIT
•c/w Quality Semi-Conductors r i'ii 12 3 -vw — l-wv — I — * R' 12 -3 "H 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package r , rJTL, jlUl^t A / MOOV *1 */* soi'. . \^j"*~L K \ , H
Manufacture
NJS
BDW93CFP
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Manufacture
STMicroelectronics
BDW63C
NPN Transistor
rature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEB IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 6 0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT Th
Manufacture
Power Innovations Limited
BDW74D
Silicon PNP Darlington Power Transistor
l Resistance, Junction to Case isc website:www.iscsemi.com MAX UNIT 1.56 ℃/W 62.5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAM
Manufacture
INCHANGE

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