• Part: BDW47G
  • Description: Darlington Complementary Silicon Power Transistors
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 82.39 KB
BDW47G Datasheet (PDF) Download
onsemi
BDW47G

Key Features

  • High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc.
  • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min) - BDW46 100 Vdc (min) - BDW42/BDW47
  • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc
  • Monolithic Construction with Built-In Base Emitter Shunt resistors
  • TO-220 Compact Package
  • These Devices are Pb-Free and are RoHS Compliant*