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BDW47G Datasheet Darlington Complementary Silicon Power Transistors

Manufacturer: onsemi

Overview: BDW42G (NPN), BDW46G, BDW47G (PNP) Darlington plementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • High DC Current Gain.
  • hFE = 2500 (typ) @ IC = 5.0 Adc.
  • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min).
  • BDW46 100 Vdc (min).
  • BDW42/BDW47.
  • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc.
  • Monolithic Construction with Built.
  • In Base Emitter Shunt resistors.
  • TO.
  • 220 Compact Package.
  • These Devices are Pb.
  • Free.

Similar Datasheet

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More Datasheets from onsemi

Part Number Description
BDW47 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDW42 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDW42G Darlington Complementary Silicon Power Transistors
BDW46 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDW46G Darlington Complementary Silicon Power Transistors

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