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BDW47 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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ON Semiconductor

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BDW47 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS by ON Semiconductor - Datasheet Preview — Datasheet preview – BDW47

Datasheet Details

Part number	BDW47
Manufacturer	ON Semiconductor
File Size	121.03 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet	BDW47 Datasheet
Additional preview pages of the BDW47 datasheet.

Product details

Features

High DC Current Gain.
hFE = 2500 (typ) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min).
BDW46 100 Vdc (min).
BDW42/BDW47.
Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc.
Monolithic Construction with Built.
In Base Emitter Shunt resistors.
TO.
220AB Compact Package.
Pb.
Free Packages Are Ava.

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Published: Mar 23, 2005 |