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BDW42G - Darlington Complementary Silicon Power Transistors

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ON Semiconductor

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BDW42G Darlington Complementary Silicon Power Transistors by ON Semiconductor - Datasheet Preview — Datasheet preview – BDW42G

Datasheet Details

Part number	BDW42G
Manufacturer	ON Semiconductor
File Size	82.39 KB
Description	Darlington Complementary Silicon Power Transistors
Datasheet	BDW42G Datasheet
Additional preview pages of the BDW42G datasheet.

Product details

Features

High DC Current Gain.
hFE = 2500 (typ) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min).
BDW46 100 Vdc (min).
BDW42/BDW47.
Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc.
Monolithic Construction with Built.
In Base Emitter Shunt resistors.
TO.
220 Compact Package.
These Devices are Pb.
Free.

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Other Datasheets by ON Semiconductor

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Published: Mar 2, 2017 |