BDW42G - Darlington Complementary Silicon Power Transistors

onsemi

Key Features

High DC Current Gain.
hFE = 2500 (typ) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min).
BDW46 100 Vdc (min).
BDW42/BDW47.
Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc.
Monolithic Construction with Built.
In Base Emitter Shunt resistors.
TO.
220 Compact Package.
These Devices are Pb.
Free.

BDW42G darlington complementary silicon power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	BDW42G
Manufacturer	onsemi
File Size	82.39 KB
Description	Darlington Complementary Silicon Power Transistors
Datasheet	BDW42G Datasheet

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Other Datasheets by onsemi

Part Number	Description
BDW42	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDW46	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDW46G	Darlington Complementary Silicon Power Transistors
BDW47	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDW47G	Darlington Complementary Silicon Power Transistors

Full PDF Text Transcription (Reference)

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BDW42G (NPN), BDW46G, BDW47G (PNP) Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.