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BDW42G Datasheet Darlington Complementary Silicon Power Transistors

Manufacturer: onsemi

Overview: BDW42G (NPN), BDW46G, BDW47G (PNP) Darlington plementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

Datasheet Details

Part number BDW42G
Manufacturer onsemi
File Size 82.39 KB
Description Darlington Complementary Silicon Power Transistors
Datasheet BDW42G-ONSemiconductor.pdf

Key Features

  • High DC Current Gain.
  • hFE = 2500 (typ) @ IC = 5.0 Adc.
  • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min).
  • BDW46 100 Vdc (min).
  • BDW42/BDW47.
  • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc.
  • Monolithic Construction with Built.
  • In Base Emitter Shunt resistors.
  • TO.
  • 220 Compact Package.
  • These Devices are Pb.
  • Free.

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