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BDW46G - Darlington Complementary Silicon Power Transistors

Product Overview

ON Semiconductor

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BDW46G Darlington Complementary Silicon Power Transistors by ON Semiconductor - Datasheet Preview — Datasheet preview – BDW46G

Datasheet Details

Part number	BDW46G
Manufacturer	ON Semiconductor
File Size	82.39 KB
Description	Darlington Complementary Silicon Power Transistors
Datasheet	BDW46G Datasheet
Note	This datasheet PDF includes multiple part numbers: BDW46G, BDW42G. Please refer to the document for exact specifications by model.
Additional preview pages of the BDW46G datasheet.

Product details

Features

High DC Current Gain.
hFE = 2500 (typ) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min).
BDW46 100 Vdc (min).
BDW42/BDW47.
Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc.
Monolithic Construction with Built.
In Base Emitter Shunt resistors.
TO.
220 Compact Package.
These Devices are Pb.
Free.

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Other Datasheets by ON Semiconductor

BDW42G - Darlington Complementary Silicon Power Transistors
BDW47 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDW47G - Darlington Complementary Silicon Power Transistors

Published: Mar 2, 2017 |