BDW47 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	BDW47
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	130.74 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet	BDW47 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
BDW40	(BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDW41	(BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDW42	(BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDW43	(BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDW44	(BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDW42/D Darlington Complementary Silicon Power Transistors . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 (typ.) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min.) — BDW46 VCEO(sus) = 100 Vdc (min.) — BDW42/BDW47 • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc VCE(sat) = 3.0 Vdc (max.) @ IC = 10.