BDW46 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Product Overview

ON Semiconductor

Part number	BDW46
Manufacturer	ON Semiconductor
File Size	121.03 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet	BDW46 Datasheet
Additional preview pages of the BDW46 datasheet.

http://onsemi. com.
High DC Current Gain.
hFE = 2500 (typ) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc:.
VCEO(sus) = 80 Vdc (min).
BDW46 100 Vdc (min).
BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc Monolithic Construction with Built.
In Base Emitter Shunt resistors TO.
220AB Compact Package Pb.
Fr.

📁 Similar Datasheet

BDW46 - PNP Transistor (INCHANGE)
BDW46 - (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
BDW40 - NPN Transistor (INCHANGE)
BDW40 - (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
BDW41 - NPN Transistor (INCHANGE)
BDW41 - (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
BDW42 - NPN Transistor (INCHANGE)
BDW42 - SILICON POWER TRANSISTOR (SavantIC)

Other Datasheets by ON Semiconductor

Published: Mar 23, 2005 |