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BDW46 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Key Features

  • http://onsemi. com.
  • High DC Current Gain.
  • hFE = 2500 (typ) @ IC = 5.0 Adc.
  • Collector Emitter Sustaining Voltage @ 30 mAdc:.
  • VCEO(sus) = 80 Vdc (min).
  • BDW46 100 Vdc (min).
  • BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc Monolithic Construction with Built.
  • In Base Emitter Shunt resistors TO.
  • 220AB Compact Package Pb.
  • Fr.

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Datasheet Details

Part number BDW46
Manufacturer onsemi
File Size 121.03 KB
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet download datasheet BDW46 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: • • • • VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.