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No Part Number Description Manufacture PDF
352 BDX10 Bipolar NPN Device

BDX10 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically seal
Seme LAB
Seme LAB
BDX10 pdf
351 BDX11 Bipolar NPN Device

BDX11 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
Seme LAB
Seme LAB
BDX11 pdf
350 BDX12 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

BDX12 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
Seme LAB
Seme LAB
BDX12 pdf
349 BDX14A Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification BDX14A DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(
Inchange Semiconductor
Inchange Semiconductor
BDX14A pdf
348 BDX14AA PNP SILICON TRANSISTOR/ EPITAXIAL BASE

BDX14AA MECHANICAL DATA Dimensions in mm PNP SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (
Seme LAB
Seme LAB
BDX14AA pdf
347 BDX16A Bipolar PNP Device

BDX16A Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.7
Seme LAB
Seme LAB
BDX16A pdf
346 BDX18 SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX18 DESCRIPTION ·With TO-3 package ·High switching speed APPLICATIONS ·LF large signal power am
SavantIC
SavantIC
BDX18 pdf
345 BDX18 Bipolar PNP Device

BDX18 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
Seme LAB
Seme LAB
BDX18 pdf
344 BDX18 PNP SILICON TRANSISTOR EPITAXIAL BASE

BDX18 – BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Thermal Fatigue Inspection Compliance to RoHS Applications : • • • • Series a
Comset Semiconductors
Comset Semiconductors
BDX18 pdf
343 BDX18 Trans GP BJT PNP 70V 15A 3-Pin(2+Tab) TO-3

New Jersey Semiconductor
New Jersey Semiconductor
BDX18 pdf
342 BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE

BDX18 – BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Thermal Fatigue Inspection Compliance to RoHS Applications : • • • • Series a
Comset Semiconductors
Comset Semiconductors
BDX18N pdf
341 BDX20 Silicon PNP Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDX20 DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -140V(Min) ·High S
Inchange Semiconductor
Inchange Semiconductor
BDX20 pdf


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