BDX Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor BDX14A DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(M

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BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington

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BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applicati

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SavantIC Semiconductor Silicon PNP Power Transistors Product Specification BDX34/A/B/C DESCRIPTION ·With TO-220C package ·High DC current gain ·DARL

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BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applicati

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX77 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Low satur

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PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amp

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX53B/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for gen

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BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C r

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amp

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDX53C DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min)

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX11 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Current

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX13 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=15-60@IC = 8A ·Collect

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX12 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Excellent Sa

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amp

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BDX11 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

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BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low s

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BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B

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