| No |
Part Number |
Description |
Manufacture |
PDF |
| 383 |
BDX10 |
Bipolar NPN Device
BDX10
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically seal |
Seme LAB
|
|
| 382 |
BDX11 |
Bipolar NPN Device
BDX11
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
Seme LAB
|
|
| 381 |
BDX12 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
BDX12
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
Seme LAB
|
|
| 380 |
BDX14 |
PNP SILICON TRANSISTOR/ EPITAXIAL BASE
BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 ( |
Seme LAB
|
|
| 379 |
BDX14A |
PNP SILICON TRANSISTOR/ EPITAXIAL BASE
BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 ( |
Seme LAB
|
|
| 378 |
BDX14A |
Silicon PNP Power Transistor
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDX14A
DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -55V( |
Inchange Semiconductor
|
|
| 377 |
BDX14AA |
PNP SILICON TRANSISTOR/ EPITAXIAL BASE
BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 ( |
Seme LAB
|
|
| 376 |
BDX16A |
Bipolar PNP Device
BDX16A
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.7 |
Seme LAB
|
|
| 375 |
BDX18 |
PNP SILICON TRANSISTOR EPITAXIAL BASE
|
ETC
|
|
| 374 |
BDX18 |
SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BDX18
DESCRIPTION ·With TO-3 package ·High switching speed APPLICATIONS ·LF large signal power am |
SavantIC
|
|
| 373 |
BDX18 |
Bipolar PNP Device
BDX18
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. |
Seme LAB
|
|
| 372 |
BDX18 |
PNP SILICON TRANSISTOR EPITAXIAL BASE
BDX18 – BDX18N
PNP SILICON TRANSISTOR EPITAXIAL BASE
LF Large Signal Power Amplification High Current Switching Thermal Fatigue Inspection Compliance to RoHS Applications : • • • • Series a |
Comset Semiconductors
|
|
