BDX Datasheet | Pinout, Features, Price Comparison & PDF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX77 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Low satur

BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applicati

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX18 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High switchi

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX53B/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for gen

isc Silicon PNP Power Transistor BDX14A DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(M

NPN BDX54 – BDX54A – BDX54B – BDX54C SILICON POWER DARLINGTON TRANSISTORS The BDX54, BDX54A, BDX54B and BDX54C are silicon epitaxial-base PNP transis

isc Silicon PNP Power Transistors BDX18 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturati

BDX12 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP

www.DataSheet4U.com BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BDX54, BDX54A, BDX54B a

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type B

NPN BDX53 – BDX53A – BDX53B – BDX53C SILICON POWER DARLINGTON TRANSISTORS The BDX53, BDX53A, BDX53B and BDX53C are silicon epitaxial-base NPN transis

NPN BDX54 – BDX54A – BDX54B – BDX54C SILICON POWER DARLINGTON TRANSISTORS The BDX54, BDX54A, BDX54B and BDX54C are silicon epitaxial-base PNP transis

isc Silicon PNP Power Transistor BDX14 DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(Mi

PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications

BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applicati

BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington

BDX65 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

BDX65B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX65C www.datasheet4u.com DESCRIPTION ·With TO-3 package ·DARLINGTON