BDX Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor BDX14A DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(M

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification BDX53/A/B/C DESCRIPTION ·With TO-220C package ·High DC current gain ·DARL

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX18 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High switchi

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BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B

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BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applicati

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® BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN po

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX77 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Low satur

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Ty

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX78 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complemen

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SavantIC Semiconductor Silicon PNP Power Transistors Product Specification BDX34/A/B/C DESCRIPTION ·With TO-220C package ·High DC current gain ·DARL

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Note Please read rating and CAUTION (for storage, operating, rating, soldering, mounting and handling) in this PDF catalog to prevent smoking and/or

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Typ

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDX53C DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min)

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isc Silicon PNP Darlington Power Transistor BDX34 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) ·High DC Current Gain :

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isc Silicon PNP Power Transistors BDX18 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturati

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SavantIC Semiconductor Silicon PNP Power Transistors Product Specification BDX34/A/B/C DESCRIPTION ·With TO-220C package ·High DC current gain ·DARL

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BDX12 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX33B/D Darlington Complementary Silicon Power Transistors . . . designed for general

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A p p l i c at i o n S p e c i f i c Ca pa c i t o rs High Frequency Ceramic Capacitors ERB Product Summary ERB Series: Exhibiting a capacitance range

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