BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applicati

isc Silicon PNP Power Transistor BDX14A DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(M

BDX65 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

isc Silicon NPN Darlington Power Transistor BDX33D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain :

BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington

BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·High Current Capability ·Wide area of safe

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type

BDX64B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Typ

BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C r

MC68HC05BD3D/H MC68HC05BD3 TECHNICAL DATA MOTOROLA HC05 e MC68HC05BD3 h S MC68HC705BD3 a t MC68HC05BD5 a TECHNICAL DATA t e U 4 .c m o w w .

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type

BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power d

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type B

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification BDX53/A/B/C DESCRIPTION ·With TO-220C package ·High DC current gain ·DARL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX53B/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for gen

BDX62B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP

NPN BDX54 – BDX54A – BDX54B – BDX54C SILICON POWER DARLINGTON TRANSISTORS The BDX54, BDX54A, BDX54B and BDX54C are silicon epitaxial-base PNP transis

PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications