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BDX Matched Datasheet



Part Number Description Manufacture
BDX53C
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

■ Good hFE linearity
■ High fT frequency
■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application
■ Audio amplifiers
■ Linear and switching industrial equipment Description The devices are manufactured in
Manufacture
STMicroelectronics
BDX53
NPN Epitaxial Silicon Transistor

• Power Darlington TR
• Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit C 1 TO-220 1.Base 2.Collector 3.Emitter B R1 R1 ≅ 8.4kΩ R2 ≅ 0.3kΩ R2 E Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Par
Manufacture
Fairchild Semiconductor
BDX10
Bipolar NPN Device
age dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Te
Manufacture
Seme LAB
BDX33B
Darlington Complementary Silicon Power Transistors
ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Manufacture
Motorola Inc
BDX67
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
lab.co.uk E-mail: [email protected] 100 ï ï ï í 120 ï ï ï 140 ï î V V A A mA W °C °C K/ W 5 5 5 5 16 20 250 150 200 -65 to +200 1.17 7/99 BDX67 BDX67A BDX67B BDX67C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise stated) Paramete
Manufacture
Seme LAB
BDX63A
Silicon NPN Darlington Power Transistor
& iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX63 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX63A
Manufacture
Inchange Semiconductor
BDX24
NPN Transistor
otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 1A V
Manufacture
INCHANGE
BDX34C
Silicon PNP Power Transistors
Manufacture
SavantIC
BDX33D
Silicon NPN Power Transistor
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat
Manufacture
Inchange Semiconductor
BDX33C
NPN Transistor
gton Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VBE(on)
Manufacture
INCHANGE

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