SavantIC Semiconductor Product Specification Sil.
SavantIC
BDY55 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY55 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High current.
Seme LAB
BDY55X - Bipolar NPN Device
BDY55X Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .
Inchange Semiconductor
BDY55X - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BDY55X DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-100@IC = 4A ·Collector-Emitter Saturat.
Seme LAB
BDY55 - Bipolar NPN Device
BDY55 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .
Comset Semiconductors
BDY55 - (BDY55 / BDY56) NPN SILICON TRANSISTORS
BDY55 – BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA The BDY55 and BDY56 are mounted in TO-3 metal package. LF Large Signal Power Amplification High .
INCHANGE
BDY55 - NPN Transistor
isc Silicon NPN Power Transistor BDY55 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturatio.
Comset Semiconductors
BDY56 - (BDY55 / BDY56) NPN SILICON TRANSISTORS
BDY55 – BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA The BDY55 and BDY56 are mounted in TO-3 metal package. LF Large Signal Power Amplification High .
