BF620 Datasheet | Specifications & PDF Download

RoHS BF620 BF620 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 50 mA OV

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BF620; BF622 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr

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BF620 TRANSISTOR (NPN) FEATURES z Low current (max. 50mA) z High voltage (max. 300V). z Video output stages. Marking：DC SOT-89 1. BASE 2. COLLECT

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BF620 NPN high-voltage transistor 8 October 2024 Product data sheet 1. General description NPN high-voltage transistor in a SOT89 (SC-62) flat lead

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PLANETA BF620 The Small-signal NPN Silicon High Voltage Medium-Power Transistor DESCRIPTION The BF620 is an NPN silicon epitaxial transistor designe

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NPN high-voltage Transistors FEATURES z Low current(max.50mA). z High voltage(max.300V). z Viode voltage stages. z PNPcomplements:BF621 and BF623. P

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Features „ Low Current (Max. 50mA) „ High Voltage (Max. 300V) „ Video Output Stages Absolute Maximum Ratings (TA=25°C unless otherwise specified) Pa

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SMD Type Transistors Silicon NPN epitaxial planer type BF620; BF622 Features Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum

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