BU407 Datasheet | Specifications & PDF Download

BU406D BU407D SILICON NPN SWITCHING TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s NPN TRANSISTOR s VERY HIGH SWITCHING SPEED APPLICATIONS: s HORIZ

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VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere FEATURES * Ideal for printed circuit board * Surge overload rating: 130 amperes peak * Mounting posi

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isc Silicon NPN Power Transistors DESCRIPTION ·High Voltage ·Fast Switching Speed- : toff= 0.75μs (Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic P

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2.

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BU407/407H BU407/407H High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Sili

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BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s.

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General-purpose CMOS Logic IC Series (BU4S,BU4000B Series) High Voltage CMOS Logic ICs BU4001B/F,BU4011B/F/FV,BU4030B/F,BU4070B/F, BU4081

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General-purpose CMOS Logic IC Series (BU4S,BU4000B Series) High Voltage CMOS Logic ICs BU4001B/F,BU4011B/F/FV,BU4030B/F,BU4070B/F, BU4081

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BU407/407H BU407/407H High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Sili

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·High voltage ·Fast

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4 GBU401 - GBU407 Taiwan Semiconductor 4A, 50V - 1000V Glass Passivated Single-Phase Bridge Rectifier FEATURES ● Ideal for printed circuit board ●

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BU407 Power Transistor CRT Deflection Transistors Features: • NPN bipolar power transistors for use in high voltage, high speed transistors for horiz

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BU406 – BU407 NPN SILCON EPITAXIAL-BASE POWER TRANSISTORS They are NPN transistors mounted in Jedec TO-220 plastic package. They are intended for use

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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 750ns(Max) ·Low Saturation Voltage- : VCE(sa

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isc Silicon NPN Power Transistor BU407D DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage-

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KBU401 thru KBU407 SINGLE-PHASE SILICON BRIDGE CHENG- YI ELECTRONIC VOLTAGE RANGE 50 TO 1000 VOLTS CURRENT 4.0 Amperes FEATURES High Surge current c

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BU407 HIGH CURRENT NPN SILICON TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR s APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TV

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