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BU800 Datasheet | Specifications & PDF Download

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BU800 NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·Hi.

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GBU8005 - Bridge Rectifier

SEMICONDUCTOR TECHNICAL DATA GBU8005 ~ GBU810 Bridge Rectifier ■ Features ● Io 8A ● VRRM 50V~1000V ● Glass passivated chip ● High surge forwa
Rating: 1 (4 votes)
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BU800 - NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max
Rating: 1 (4 votes)
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GBU8005 - Silicon Bridge Rectifiers

Production specification Silicon Bridge Rectifiers GBU8005--GBU810 FEATURES z Rating to 1000V PRV z Surge overload rating to 200 Amperes peak z Id
Rating: 1 (3 votes)
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