BUZ35 Datasheet | Specifications & PDF Download

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BUZ 350 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 350 VDS 200 V ID 22 A RDS

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BUZ 357 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 357 VDS 1000 V ID 5.1 A R

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isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·SOA is Power Dissipation Limited ·High speed swit

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SIPMOS ® Power Transistor BUZ 350 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 22 A RDS(on)

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.r.~=-L= S[RG'liS]D-©TOOH@~OOJ~M©uSOO@O~DN©~ BUZ353 N - CHANNEL ENHANCEMENT MODE POWER MaS TRANSISTOR TYPE BUZ353 Voss 500 V Ros(on) 0.6 Q 10 9.

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BUZ 358 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 358 VDS 1000 V ID 4.5 A R

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BUZ354 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDs(on) ID BUZ354 500 V 0.8 G 8A • HIGH SPEED SWITCHING • HIGH VOLTAGE - 50

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