.
Siemens Semiconductor Group
BUZ358 - Power Transistor
BUZ 358 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 358 VDS 1000 V ID 4.5 A R.
INCHANGE
BUZ35 - N-Channel MOSFET
isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·SOA is Power Dissipation Limited ·High speed swit.
Siemens Semiconductor Group
BUZ350 - Power Transistor
BUZ 350 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 350 VDS 200 V ID 22 A RDS.
Infineon Technologies AG
BUZ350 - Power Transistor
SIPMOS ® Power Transistor BUZ 350 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 22 A RDS(on) .
Siemens Semiconductor Group
BUZ357 - Power Transistor
BUZ 357 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 357 VDS 1000 V ID 5.1 A R.
STMicroelectronics
BUZ354 - N-Channel MOSFET
BUZ354 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDs(on) ID BUZ354 500 V 0.8 G 8A • HIGH SPEED SWITCHING • HIGH VOLTAGE - 50.
STMicroelectronics
BUZ353 - N-Channel MOSFET
.r.~=-L= S[RG'liS]D-©TOOH@~OOJ~M©uSOO@O~DN©~ BUZ353 N - CHANNEL ENHANCEMENT MODE POWER MaS TRANSISTOR TYPE BUZ353 Voss 500 V Ros(on) 0.6 Q 10 9..
