BUZ60 Datasheet | Specifications & PDF Download

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BUZ 51 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 51 VDS 1000 V ID 3.4 A RDS

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isc N-Channel Mosfet Transistor BUZ60 ·FEATURES ·5.5A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characte

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BUZ60B N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ60B Voss 400 V Ros(on) 1.5 n 10 4.5 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS

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BUZ60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ60 Voss 400 V Ros(on) 1.00 10 5.5 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS •

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isc N-Channel Mosfet Transistor BUZ60B ·FEATURES ·4.5A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Charact

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BUZ60 Semiconductor Data Sheet October 1998 File Number 2260.1 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 5.5A, 400V [ /Title This

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