BV 4, BV 6 High Voltage Si-Rectifiers Si-Hochspann.
Shindengen
LM25KBV60FR - Bridge Diodes
LM25KBV60FR Bridge Diodes 600V, 25A Feature ・Small･Compact SIP ・Low VF ・Halogen free ・UL E142422 ・Pb free terminal ・RoHS:Yes OUTLINE Package (House N.
LGE
RBV602 - Silicon Bridge Rectifiers
Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 200 amperes peak RB.
EIC discrete Semiconductors
RBV602 - SILICON BRIDGE RECTIFIERS
www.eicsemi.com RBV600 - RBV610 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * High current capability * High surge .
EIC discrete Semiconductors
RBV608 - SILICON BRIDGE RECTIFIERS
www.eicsemi.com RBV600 - RBV610 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * High current capability * High surge .
ON Semiconductor
MMBV609LT1 - Silicon Tuning Diode
www.DataSheet4U.com MMBV609LT1 Preferred Device Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or.
SeCoS
RBV603S - Molding Single-Phase Bridge Rectifier
D5SB10 ~ D5SB100 Elektronische Bauelemente 100 V ~ 1000 V 6.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier RoHS Compliant P.
Winsem Technology
WTBV68 - POWER TRANSISTOR
Winsem Technology Corp. High Voltage NPN Power Transistor Features • High Voltage • Very High Switch Speed • BVCEO : 400V • BVCBO : 700V • IC : 0.6A •.
LGE
RBV604 - Silicon Bridge Rectifiers
Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 200 amperes peak RB.
GME
RBV606 - Silicon Bridge Rectifiers
Production specification Silicon Bridge Rectifiers FEATURES z Ideal for printed circuit board z Reliable low cost construction utilizing molded plast.
ATMEL Corporation
AT28BV64 - 64K (8K x 8) Battery-Voltage Parallel EEPROMs
Features • 2.7V to 3.6V Supply – Full Read and Write Operation • Low Power Dissipation – 8 mA Active Current – 50 µA CMOS Standby Current • Read Acces.
ATMEL Corporation
AT28BV64B - 64K (8K x 8) Battery-Voltage Parallel EEPROM
Features • Single 2.7V to 3.6V Supply • Hardware and Software Data Protection • Low Power Dissipation – 15mA Active Current – 20µA CMOS Standby Curren.
EIC discrete Semiconductors
RBV606 - SILICON BRIDGE RECTIFIERS
www.eicsemi.com RBV600 - RBV610 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * High current capability * High surge .
EIC discrete Semiconductors
RBV606D - SILICON BRIDGE RECTIFIERS
www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV600D - RBV610D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Ampere.
EIC discrete Semiconductors
RBV610D - SILICON BRIDGE RECTIFIERS
www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV600D - RBV610D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Ampere.
ST Microelectronics
STBV68 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
www.DataSheet4U.com ® STBV68 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS .
Comchip Technology
CDBV6-54T - SMD Schottky Barrier Diode Arrays
SMD Schottky Barrier Diode Arrays SMD Diodes Specialist CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features -Low .
Comchip Technology
CDBV6-54AD - SMD Schottky Barrier Diode Arrays
SMD Schottky Barrier Diode Arrays SMD Diodes Specialist CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features -Low .
