C2206 Datasheet | Specifications & PDF Download

eGaN® FET DATASHEET EPC2206 – Automotive 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 2.2 mΩ ID , 90 A AEC-Q101 D G S EPC2206

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FEATURES ■ Sample Rate: 105Msps/80Msps ■ 78.2dBFS Noise Floor ■ 100dB SFDR ■ SFDR >82dB at 250MHz (1.5VP-P Input Range) ■ PGA Front End (2.25VP-P or 1

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Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm Complementary to 2SA1254 ■ Features (0.4) 6.9±0.1

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UTC2206B STEREO AUDIO AMPLIFIER DESCRIPTION LI NEAR I NTEGRATED CI RCUI T The UTC2206B is a monolithic integrated consisting of a 2channel powerampl

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BSC2206 HV 25.2 KV FV 4-8.2KV SV 0-700V

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Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm Complementary to 2SA1254 ■ Features (0.4) 6.9±0.1

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MIC2206 www.DataSheet4U.com 2MHz PWM Synchronous Buck Regulator with LOWQ Mode and Voltage Scaling General Description The Micrel MIC2206 is a high e

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Features nn Sample Rate: 105Msps/80Msps nn 77.3dBFS Noise Floor nn 98dB SFDR nn SFDR >82dB at 250MHz (1.5VP-P Input Range) nn PGA Front End (2.25VP-P

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