C2263 Datasheet | Specifications & PDF Download

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Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz Features • GaN on SiC HEMT Technology • Pulsed CW Performance: 2155 MHz, 48 V, 40 µs Pu

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CY7C2263XV18 CY7C2265XV18 36-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit QDR® II+ Xtreme SRAM Fo

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BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ, R2=47kΩ) T

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LTC2265-12/ LTC2264-12/LTC2263-12 12-Bit, 65Msps/40Msps/ 25Msps Low Power Dual ADCs FEATURES n 2-Channel Simultaneous Sampling ADC n 71dB SNR n 90dB

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LTC2265-14/ LTC2264-14/LTC2263-14 14-Bit, 65Msps/40Msps/ 25Msps Low Power Dual ADCs FEATURES n 2-Channel Simultaneous Sampling ADC n 73.7dB SNR n

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CY7C2263KV18/CY7C2265KV18 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit QDR® II+ SRAM 4-Word Burst Arc

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