CY7C2263XV18 36-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture

Cypress Semiconductor

Description

CY7C2263XV18 CY7C2265XV18 36-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit QDR® II+ Xtreme SRAM Fo.

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Datasheet Specifications

Part number: CY7C2263XV18
Manufacturer: Cypress Semiconductor
File Size: 1.07 MB
Datasheet: CY7C2263XV18-CypressSemiconductor.pdf
Description: 36-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture

Features

* Separate independent read and write data ports
* Supports concurrent transactions
* 633 MHz clock for high bandwidth
* Four-word burst for reducing address bus frequency
* Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 1266 MHz) at 633 MHz

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CY7C2263XV18 36-Mbit QDR II + Xtreme SRAM Four-Word Burst Architecture Cypress Semiconductor

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