CY7C2263XV18 36-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture

Cypress Semiconductor

Description

CY7C2263XV18 CY7C2265XV18 36-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit QDR® II+ Xtreme SRAM Fo.

📥 Download Datasheet

CY7C2263XV18 Datasheet Preview — Preview of CY7C2263XV18 PDF

Datasheet Specifications

Part number: CY7C2263XV18
Manufacturer: Cypress Semiconductor
File Size: 1.07 MB
Datasheet: CY7C2263XV18-CypressSemiconductor.pdf
Description: 36-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture

Features

* Separate independent read and write data ports
* Supports concurrent transactions
* 633 MHz clock for high bandwidth
* Four-word burst for reducing address bus frequency
* Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 1266 MHz) at 633 MHz

CY7C2263XV18 Distributors

📁 Related Datasheet

CY7C225 - 512 x 8 Registered PROM (Cypress)
CY7C277 - 32K x 8 Reprogrammable Registered PROM (Cypress)
CY7C008 - 64K/128K x 8/9 Dual-Port Static RAM (Cypress)
CY7C008V - 3.3V 64K/128K x 8/9 Dual-Port Static RAM (Cypress)
CY7C009 - 64K/128K x 8/9 Dual-Port Static RAM (Cypress)
CY7C009V - 128K x 8 Dual-Port Static RAM (Cypress)

📌 All Tags

36-Mbit QDR II + Xtreme SRAM Four-Word Burst Architecture Cypress Semiconductor

Cypress Semiconductor CY7C2263XV18-like datasheet