WGC22630 - Thermally Enhanced GaN Amplifier

MACOM

Datasheet Details

The WGC22630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications.

GaN on SiC HEMT Technology.
Pulsed CW Performance: 2155 MHz, 48 V, 40 µs Pulse Width, 10% Duty Cycle, Combined Outputs.
Output Power @ P4dB = 630 W.
Efficiency @ P4dB = 68%.
RoHS.
Compliant.

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