WGC22630 Thermally Enhanced GaN Amplifier

MACOM

Description

Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz .
The WGC22630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications.

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Datasheet Specifications

Part number: WGC22630
Manufacturer: MACOM
File Size: 910.22 KB
Datasheet: WGC22630-MACOM.pdf
Description: Thermally Enhanced GaN Amplifier

Features

* GaN on SiC HEMT Technology
* Pulsed CW Performance: 2155 MHz, 48 V, 40 µs Pulse Width, 10% Duty Cycle, Combined Outputs
* Output Power @ P4dB = 630 W
* Efficiency @ P4dB = 68%
* RoHS

WGC22630 Distributors

📁 Related Datasheet

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WGC22630 Thermally Enhanced GaN Amplifier MACOM

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