Thermally Datasheet | Specifications & PDF Download

Confidential, Limited Internal Distribution PTFA080551E/F TCohnefirdmentaialll,yL-imEintehdaInntecrneadl DiHstirgibhutioPnower RF LDMOS FETs 5T5heWrm,

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PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description Th

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PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description Th

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PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description Th

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PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002FC is a 190-watt LDMOS FET intended f

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PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally

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PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally

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PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in

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Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PT

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Confidential, Limited Internal Distribution PTFA080551E/F TCohnefirdmentaialll,yL-imEintehdaInntecrneadl DiHstirgibhutioPnower RF LDMOS FETs 5T5heWrm,

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GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz Description The PXAC241702FC is a 28 V LDMOS FET with an asymm­

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120-001 Type A Series 72 Annular Convoluted Tubing Thermally Stabilized Kynar® 120-001-16 Product Series Basic No. Dash No. (Table I) TYPE A A DIA

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GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Description The GTVA263202FC is a 340-watt (P3dB) GaN on S

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PTRA095908NB Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 – 960 MHz Description The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intende

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PTVA042502EC PTVA042502FC Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 – 806 MHz Description The PTVA042502EC and PTVA042502FC LDMOS

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PXAD184218FV Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz Description The PXAD184218FV is a 420-watt (P3dB) LDMOS FET wit

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PXAE183708NB Thermally-Enhanced High Power RF LDMOS FET 320 W, 48 V, 1805 – 1880 MHz Description The PXAE183708NB is a 320-watt LDMOS FET intended fo

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PTRA087008NB Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz Description The PTRA087008NB is a 650-watt LDMOS FET. It is designe

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