Thermally Datasheet | Specifications & PDF Download

PXAE183708NB Thermally-Enhanced High Power RF LDMOS FET 320 W, 48 V, 1805 – 1880 MHz Description The PXAE183708NB is a 320-watt LDMOS FET intended fo

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Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz Features • GaN on SiC HEMT Technology • Pulsed CW Performance: 1995 MHz, 48 V, 10 µs Pu

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GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

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PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally

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Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB19

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PTVA120501EA Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Description The PTVA120501EA LDMOS FET is designed for use in

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PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in

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PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in

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PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt

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120-001 Type A Series 72 Annular Convoluted Tubing Thermally Stabilized Kynar® 120-001-16 Product Series Basic No. Dash No. (Table I) TYPE A A DIA

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PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001E and PTFA18

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PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz www.DataSheet4U

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PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz www.DataSheet4

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PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The

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PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The

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PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-d

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PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The P

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PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz Description The

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PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description Th

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