PTFA190451E
Infineon ↗ Technologies
386.25kb
Thermally-enhanced high power rf ldmos fet. The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other
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📁 Related Datasheet
PTFA190451F - Thermally-Enhanced High Power RF LDMOS FET
(Infineon Technologies)
PTFA190451E PTFA190451F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz
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PTFA191001E - Thermally-Enhanced High Power RF LDMOS FET
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PTFA191001E PTFA191001F
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Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz
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PTFA191001F - Thermally-Enhanced High Power RF LDMOS FET
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PTFA192001E - Thermally-Enhanced High Power RF LDMOS FET
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Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz
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PTFA192001F - Thermally-Enhanced High Power RF LDMOS FET
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PTFA192001E PTFA192001F
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PTFA192401E - Thermally-Enhanced High Power RF LDMOS FET
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PTFA192401E PTFA192401F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
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PTFA192401F - Thermally-Enhanced High Power RF LDMOS FET
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PTFA192401E PTFA192401F
Confidential, Limited Internal Distribution
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PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET
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PTFA142401EL PTFA142401FL
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PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET
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PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET
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Description
The PTFA180701E and PTFA180.