PTFA190451E Datasheet, Fet, Infineon Technologies

PTFA190451E Features

  • Fet
  • Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Inte

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Part number:

PTFA190451E

Manufacturer:

Infineon ↗ Technologies

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386.25kb

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other

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TAGS

PTFA190451E
Thermally-Enhanced
High
Power
LDMOS
FET
Infineon Technologies

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Stock and price

Infineon Technologies AG
RF MOSFET LDMOS 28V H-36265-2
DigiKey
PTFA190451EV4R250XTMA1
0 In Stock
0
Unit Price : $0
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