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PTFA190451E

Thermally-Enhanced High Power RF LDMOS FET

PTFA190451E Features

* Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion =

* 39 dBc - Adjacent channel power =

* 42 dBc Typical CW performance, 1960 MH

PTFA190451E General Description

The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band. These devices are available in thermally-enhanced packages with eared or earless flanges. Manufactured with.

PTFA190451E Datasheet (386.25 KB)

Preview of PTFA190451E PDF

Datasheet Details

Part number:

PTFA190451E

Manufacturer:

Infineon ↗ Technologies

File Size:

386.25 KB

Description:

Thermally-enhanced high power rf ldmos fet.
PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930

* 1990 MHz www.Dat.

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PTFA190451E Thermally-Enhanced High Power LDMOS FET Infineon Technologies

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