PTFA191001E Datasheet - Infineon Technologies

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PTFA191001E Thermally-Enhanced High Power RF LDMOS FET

PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 * 1990 MHz www.Da.
The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications.

PTFA191001E_InfineonTechnologies.pdf

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Datasheet Details

Part number:

PTFA191001E

Manufacturer:

Infineon ↗ Technologies

File Size:

267.34 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Intermodulation distortion =

Applications

* They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. PTFA191001E Package H-36248-2 PTFA191001F Package H-37248-2 Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 900 mA, ƒ = 1960 MHz, 3GPP WCDMA

PTFA191001E Distributors

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PTFA191001E Thermally-Enhanced High Power LDMOS FET Infineon Technologies

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