PTFA191001E Datasheet, Fet, Infineon Technologies

PTFA191001E Features

• Fet
• Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz

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Part number:

PTFA191001E

Manufacturer:

Infineon ↗ Technologies

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267.34kb

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA200

PTFA191001E Application

• Applications They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the cool

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PTFA191001E

Infineon Technologies

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