PTFA190451F, PTFA190451E Datasheet - Infineon Technologies

PTFA190451F, PTFA190451E, Thermally-Enhanced High Power RF LDMOS FET

PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 * 1990 MHz www.Dat.
The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standar.

datasheet Preview Page 1 from Datasheet4u.com

PTFA190451E_InfineonTechnologies.pdf

PTFA190451F Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFA190451F, PTFA190451E. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

PTFA190451F, PTFA190451E

Manufacturer:

Infineon ↗ Technologies

File Size:

386.25 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Note:

This datasheet PDF includes multiple part numbers: PTFA190451F, PTFA190451E.
Please refer to the document for exact specifications by model.

Features

* Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion =
* 39 dBc - Adjacent channel power =
* 42 dBc Typical CW performance, 1960 MH

PTFA190451F Distributors

📁 Related Datasheet

PTFA PTFA041501E PTFA041501F PTFA041501GL PTFA041501HL PTFA043002E

📌 All Tags

PTFA190451E Thermally-Enhanced High Power LDMOS FET Infineon Technologies

Infineon Technologies PTFA190451F-like datasheet