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PTFA190451F, PTFA190451E Thermally-Enhanced High Power RF LDMOS FET

PTFA190451F Description

PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 * 1990 MHz www.Dat.
The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standar.

PTFA190451F Features

* Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion =
* 39 dBc - Adjacent channel power =
* 42 dBc Typical CW performance, 1960 MH

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PTFA190451F, PTFA190451E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTFA190451F, PTFA190451E
Manufacturer
Infineon ↗ Technologies
File Size
386.25 KB
Datasheet
PTFA190451E_InfineonTechnologies.pdf
Description
Thermally-Enhanced High Power RF LDMOS FET
Note
This datasheet PDF includes multiple part numbers: PTFA190451F, PTFA190451E.
Please refer to the document for exact specifications by model.

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Thermally-Enhanced High Power LDMOS FET Infineon Technologies
Infineon Technologies PTFA190451F-like datasheet