PTFA190451F, PTFA190451E - Thermally-Enhanced High Power RF LDMOS FET

Infineon Technologies

The PTFA190451F by Infineon Technologies is a Thermally-Enhanced High Power RF LDMOS FET. Below is the official datasheet preview.

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PTFA190451F Thermally-Enhanced High Power RF LDMOS FET by Infineon Technologies - Datasheet Preview — Official preview page of the **PTFA190451F** Thermally-Enhanced High Power RF LDMOS FET datasheet (Infineon Technologies).

Datasheet Details

Part number	PTFA190451F, PTFA190451E
Manufacturer	Infineon Technologies
File Size	386.25 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA190451E_InfineonTechnologies.pdf
Note	This datasheet PDF includes multiple part numbers: PTFA190451F, PTFA190451E. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFA190451F datasheet.

PTFA190451F Product details

Description

The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band.

Features

Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion =.
39 dBc - Adjacent channel power =.
42 dBc Typical CW performance, 1960 MHz, 28 V - Output power at P.
1dB = 60 W - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSW.

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Published: Jul 11, 2011 |