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PTFA192401E Thermally-Enhanced High Power RF LDMOS FET

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Description

PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 * 1990 MHz www.Da.
The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

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Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192401E Package H-36260-2 PTFA192401F Package H-37260-2 Single-

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PTFA192401E Thermally-Enhanced High Power LDMOS FET Infineon Technologies
Infineon Technologies PTFA192401E-like datasheet
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