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PTFA192001F, PTFA192001E Thermally-Enhanced High Power RF LDMOS FET

PTFA192001F Description

PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 * 1990 MHz www.Da.
The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

PTFA192001F Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192001E Package H-36260-2 PTFA192001F Package H-37260-2 2-Carri

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PTFA192001F, PTFA192001E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTFA192001F, PTFA192001E
Manufacturer
Infineon ↗ Technologies
File Size
296.01 KB
Datasheet
PTFA192001E_InfineonTechnologies.pdf
Description
Thermally-Enhanced High Power RF LDMOS FET
Note
This datasheet PDF includes multiple part numbers: PTFA192001F, PTFA192001E.
Please refer to the document for exact specifications by model.

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📌 All Tags

Thermally-Enhanced High Power LDMOS FET Infineon Technologies
Infineon Technologies PTFA192001F-like datasheet