PTFA192401F, PTFA192401E - Thermally-Enhanced High Power RF LDMOS FET

Infineon Technologies

The PTFA192401F by Infineon Technologies is a Thermally-Enhanced High Power RF LDMOS FET. Below is the official datasheet preview.

Datasheet Details

Part number	PTFA192401F, PTFA192401E
Manufacturer	Infineon Technologies
File Size	441.79 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA192401E_InfineonTechnologies.pdf
Note	This datasheet PDF includes multiple part numbers: PTFA192401F, PTFA192401E. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFA192401F datasheet.

The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192401E Package H-36260-2 PTFA192401F Package H-37260-2 Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.84 MHz BW -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 34 36 38 40 42 44 46 4.

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Published: Jul 11, 2011 |