* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192401E Package H-36260-2 PTFA192401F Package H-37260-2 Single-
PTFA192401F Datasheet (441.79 KB)
PTFA192401F
Infineon ↗ Technologies
441.79 KB
Thermally-enhanced high power rf ldmos fet.
PTFA192401E PTFA192401F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930
* 1990 MHz
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