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PTFA192401F, PTFA192401E Thermally-Enhanced High Power RF LDMOS FET

PTFA192401F Description

PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 * 1990 MHz www.Da.
The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

PTFA192401F Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192401E Package H-36260-2 PTFA192401F Package H-37260-2 Single-

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PTFA192401F, PTFA192401E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTFA192401F, PTFA192401E
Manufacturer
Infineon ↗ Technologies
File Size
441.79 KB
Datasheet
PTFA192401E_InfineonTechnologies.pdf
Description
Thermally-Enhanced High Power RF LDMOS FET
Note
This datasheet PDF includes multiple part numbers: PTFA192401F, PTFA192401E.
Please refer to the document for exact specifications by model.

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📌 All Tags

Thermally-Enhanced High Power LDMOS FET Infineon Technologies
Infineon Technologies PTFA192401F-like datasheet