* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192001E Package H-36260-2 PTFA192001F Package H-37260-2 2-Carri
PTFA192001E Datasheet (296.01 KB)
PTFA192001E
Infineon ↗ Technologies
296.01 KB
Thermally-enhanced high power rf ldmos fet.
PTFA192001E PTFA192001F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930
* 1990 MHz
www.Da.
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