PTFA192001E Datasheet - Infineon Technologies

datasheet Preview Page 1 from Datasheet4u.com

PTFA192001E Thermally-Enhanced High Power RF LDMOS FET

PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 * 1990 MHz www.Da.
The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

PTFA192001E_InfineonTechnologies.pdf

PTFA192001E Datasheet Preview — Preview of PTFA192001E PDF

Datasheet Details

Part number:

PTFA192001E

Manufacturer:

Infineon ↗ Technologies

File Size:

296.01 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192001E Package H-36260-2 PTFA192001F Package H-37260-2 2-Carri

PTFA192001E Distributors

📁 Related Datasheet

PTFA PTFA041501E PTFA041501F PTFA041501GL PTFA041501HL PTFA043002E

📌 All Tags

PTFA192001E Thermally-Enhanced High Power LDMOS FET Infineon Technologies

Infineon Technologies PTFA192001E-like datasheet