PTFA192001E Datasheet, Fet, Infineon Technologies

PTFA192001E Features

• Fet include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent

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PTFA192001E

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Infineon ↗ Technologies

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to

PTFA192001E Application

• Applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Man

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PTFA192001E

Infineon Technologies

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