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PTFA191001F, PTFA191001E Datasheet - Infineon Technologies

PTFA191001F Thermally-Enhanced High Power RF LDMOS FET

The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation ava.

PTFA191001F Features

* Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Intermodulation distortion =

PTFA191001E_InfineonTechnologies.pdf

This datasheet PDF includes multiple part numbers: PTFA191001F, PTFA191001E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

PTFA191001F, PTFA191001E

Manufacturer:

Infineon ↗ Technologies

File Size:

267.34 KB

Description:

Thermally-enhanced high power rf ldmos fet.

Note:

This datasheet PDF includes multiple part numbers: PTFA191001F, PTFA191001E.
Please refer to the document for exact specifications by model.

PTFA191001F Distributor

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PTFA191001F PTFA191001E Thermally-Enhanced High Power LDMOS FET Infineon Technologies