PTFA191001F Datasheet, Fet, Infineon Technologies

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PTFA191001F

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Infineon ↗ Technologies

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA200

✔ PTFA191001F Features

Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V -

✔ PTFA191001F Application

They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced

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PTFA191001F Thermally-Enhanced High Power LDMOS FET Infineon Technologies