PTFA191001E_InfineonTechnologies.pdf
Datasheet Details
Part number:
PTFA191001F, PTFA191001E
Manufacturer:
Infineon ↗ Technologies
File Size:
267.34 KB
Description:
Thermally-enhanced high power rf ldmos fet.
Note:
This datasheet PDF includes multiple part numbers: PTFA191001F, PTFA191001E.
Please refer to the document for exact specifications by model.
PTFA191001F, PTFA191001E, Thermally-Enhanced High Power RF LDMOS FET
The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications.
They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz.
Thermally-enhanced packaging provides the coolest operation ava
PTFA191001F Features
* Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Intermodulation distortion =
📁 Related Datasheet
📌 All Tags
